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1. Identity statement
Reference TypeJournal Article
Sitemtc-m16.sid.inpe.br
Holder Codeisadg {BR SPINPE} ibi 8JMKD3MGPCW/3DT298S
Identifier6qtX3pFwXQZ3r59YDa/K23Hb
Repositorysid.inpe.br/iris@1916/2006/01.30.16.59
Last Update2006:01.30.16.59.00 (UTC) administrator
Metadata Repositorysid.inpe.br/iris@1916/2006/01.30.16.59.45
Metadata Last Update2018:06.05.01.16.43 (UTC) administrator
Secondary KeyINPE-13395-PRE/8610
ISSN0021-8979
Citation KeyBarrosAbraRapp:2006:ElOpPr
TitleElectrical and optical properties of PbTe p-n junction infrared sensors
Year2006
MonthJan
Access Date2024, May 18
Secondary TypePRE PI
Number of Files1
Size114 KiB
2. Context
Author1 Barros, A. S.
2 Abramof, Eduardo
3 Rappl, Paulo Henrique de Oliveira
Resume Identifier1
2 8JMKD3MGP5W/3C9JGUH
3 8JMKD3MGP5W/3C9JJ37
Group1 LAS-INPE-MCT-BR
2 LAS-INPE-MCT-BR
3 LAS-INPE-MCT-BR
Affiliation1 Instituto Nacional de Pesquisas Espaciais, Laboratório Associado de Sensores e Materiais, (INPE, LAS)
2 Instituto Nacional de Pesquisas Espaciais, Laboratório Associado de Sensores e Materiais, (INPE, LAS)
3 Instituto Nacional de Pesquisas Espaciais, Laboratório Associado de Sensores e Materiais, (INPE, LAS)
JournalJournal of Applied Physics
Volume99
Number024904
History (UTC)2006-06-20 17:32:18 :: vinicius -> administrator ::
2008-06-10 22:41:48 :: administrator -> simone ::
2011-05-22 03:00:16 :: simone -> administrator ::
2018-06-05 01:16:43 :: administrator -> marciana :: 2006
3. Content and structure
Is the master or a copy?is the master
Content Stagecompleted
Transferable1
Content TypeExternal Contribution
KeywordsLEAD-CHALCOGENIDE
SILICON
ARRAYS
DETECTORS
AbstractLead telluride mesa diodes were fabricated from a series of p-n junctions grown on 111 BaF2 substrates, in which the hole concentration p was kept constant at 1017 cm−3 and the electron concentration n varied between 1017 and 1019 cm−3. Capacitance-voltage analysis showed that for n1018 cm−3 the PbTe p-n junction is one sided and abrupt. The parameters incremental resistance, series and parallel resistances, and ideality factor obtained from the current-voltage I-V characteristics and the detectivity D* exhibited a large fluctuation among the photodiodes. In spite of these fluctuations, it was possible to correlate the noise and D* values to the parameters obtained from the I-V analysis. These results allow predicting the PbTe detectors figures of merit from the data obtained from the I-V curves. The best PbTe photodiodes fabricated here showed D* values close to 1011 cm Hz1/2 W−1, comparable to InSb and HgCdTe commercial detectors and to PbTe sensors fabricated on Si substrates.
AreaFISMAT
Arrangementurlib.net > BDMCI > Fonds > Produção anterior à 2021 > LABAS > Electrical and optical...
doc Directory Contentaccess
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4. Conditions of access and use
data URLhttp://urlib.net/ibi/6qtX3pFwXQZ3r59YDa/K23Hb
zipped data URLhttp://urlib.net/zip/6qtX3pFwXQZ3r59YDa/K23Hb
Languageen
Target Filebarros ti electrical.pdf
User Groupadministrator
simone
vinicius
Visibilityshown
Copy HolderSID/SCD
Archiving Policyallowpublisher allowfinaldraft
Read Permissionallow from all
Update Permissiontransferred to simone
5. Allied materials
Next Higher Units8JMKD3MGPCW/3ESR3H2
Citing Item Listsid.inpe.br/mtc-m21/2012/07.13.14.57.50 2
sid.inpe.br/bibdigital/2013/09.24.19.30 1
sid.inpe.br/mtc-m21/2012/07.13.14.44.57 1
DisseminationWEBSCI; PORTALCAPES; COMPENDEX.
Host Collectionsid.inpe.br/banon/2003/08.15.17.40
6. Notes
Empty Fieldsalternatejournal archivist callnumber copyright creatorhistory descriptionlevel doi e-mailaddress electronicmailaddress format isbn label lineage mark mirrorrepository nextedition notes orcid pages parameterlist parentrepositories previousedition previouslowerunit progress project readergroup rightsholder schedulinginformation secondarydate secondarymark session shorttitle sponsor subject tertiarymark tertiarytype typeofwork url versiontype
7. Description control
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